One-dimensional nanostructure growth on graphene and devices thereof

A device, comprising:

• a substrate that defines a horizontal plane;
• a first graphene layer disposed over the substrate, wherein the first graphene layer defines a first vertical plane perpendicular to the horizontal plane;
• and
• a first nanobar formed on the first graphene layer, wherein the first nanobar extends in a first direction parallel to the horizontal plane and normal to the first vertical plane defined by the first graphene layer.

A device, comprising:

• an insulating layer including a recess having a first sidewall, a second sidewall opposite the first sidewall, and a third sidewall interposing the first and second sidewalls, wherein the third sidewall is perpendicular to each of the first and second sidewalls, and wherein the third sidewall defines a horizontal plane;
• a cavity formed within the insulating layer and along the second sidewall of the recess;
• and
• a nanobar formed on a carbon-based layer within the recess, wherein the nanobar extends in a first direction parallel to the horizontal plane and normal to a vertical plane defined by the carbon-based layer, and wherein the nanobar extends into the cavity formed within the second sidewall of the recess.