Electronic component with a high-electron-mobility heterojunction
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorErwan Morvan
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Abstract
The invention relates to an electronic component with a high-electron-mobility heterojunction. The component includes a superposition of a first semiconductor layer and of a second semiconductor layer, to form an electron-gas layer in proximity to the interface between the first and second semiconductor layers, and first and second conductive metal electrode contacts formed on said second semiconductor layer plumb with the electron-gas layer. At least one of the first and second metal contacts has a contact length L such that L≤1.5*√(ρc/R2 Deg), where ρc is the specific resistance of the metal contact with the electron-gas layer at 425 K and R2 Deg is the sheet resistance in the electron-gas layer at 425 K.
Claims11
An electronic component with a high electron mobility heterojunction, comprising:
- a first layer of semiconductor material superimposed on a second layer of semiconductor material, to form an electron gas layer in the proximity of the interface between the first and second layers of semiconductor material, the first and second layers of semiconductor material including a nitride;
- first and second metallic contacts of conduction electrodes formed on said second layer of semiconductor material vertically with respect to the electron gas layer;
- wherein:
- at least one of said first and second metallic contacts has a contact length L such that L≤1.5*√(ρc/R2 Deg);
- in which ρc is the specific resistance of said metallic contact with the electron gas layer at 425K, in which R2 Deg is the sheet resistance in the electron gas layer at 425K.
Dependencies are inferred from the claim text.