Semiconductor device with silicide
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre Colinge, Kuo-Cheng Ching, Ta-Pen Guo, Carlos H. Diaz
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Abstract
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a first silicide region on a first type surface region of the first type region. The first silicide region is separated at least one of a first distance from a first type diffusion region of the first type region or a second distance from the channel region.
Claims20
A semiconductor device, comprising:
- a vertical nanowire;
- a silicide element;
- a dielectric layer overlying the silicide element and laterally between the vertical nanowire and the silicide element, wherein there is no intervening silicide between the silicide element and the vertical nanowire;
- and
- a gate dielectric overlying the dielectric layer and the silicide element, wherein the gate dielectric is spaced apart from the silicide element by the dielectric layer.
A semiconductor device, comprising:
- a vertical nanowire;
- a layer comprising metal;
- a dielectric layer overlying the layer comprising metal and laterally between the vertical nanowire and the layer comprising metal, wherein a bottom surface of the layer comprising metal is co-planar with a bottom surface of the dielectric layer;
- and
- a gate electrode overlying the dielectric layer and the layer comprising metal, wherein the gate electrode is spaced apart from the layer comprising metal by the dielectric layer.
A semiconductor device, comprising:
- a vertical nanowire;
- a layer comprising metal;
- and
- a dielectric layer, wherein:
- a first portion of the dielectric layer overlies the layer comprising metal,
- a second portion of the dielectric layer is laterally between the layer comprising metal and the vertical nanowire so as to space the layer comprising metal apart from the vertical nanowire, and
- the second portion extends laterally uninterruptedly from a sidewall of the vertical nanowire to a sidewall of the layer comprising metal.
Dependencies are inferred from the claim text.