Semiconductor device with source/drain contact formed using bottom-up deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Li Wang, Mrunal A. Khaderbad, Yasutoshi Okuno
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Abstract
A semiconductor device includes a first semiconductor fin, a first epitaxial layer, a first alloy layer and a contact plug. The first semiconductor fin is on a substrate. The first epitaxial layer is on the first semiconductor fin. The first alloy layer is on the first epitaxial layer. The first alloy layer is made of one or more Group IV elements and one or more metal elements, and the first alloy layer comprises a first sidewall and a second sidewall extending downwardly from a bottom of the first sidewall along a direction non-parallel to the first sidewall. The contact plug is in contact with the first and second sidewalls of the first alloy layer.
Claims20
A semiconductor device, comprising:
- a first semiconductor fin on a substrate;
- a first epitaxial layer on the first semiconductor fin;
- a first alloy cap over the first epitaxial layer, wherein the first alloy cap is made of one or more Group IV elements and one or more metal elements, and the first alloy cap comprises a first sidewall and a second sidewall extending downwardly from a bottom of the first sidewall along a direction non-parallel to the first sidewall;
- and
- a contact plug in contact with the first and second sidewalls of the first alloy cap, wherein the contact plug comprises a first tapered portion tapering toward the substrate, an extending portion extending downwardly from a bottom of the first tapered portion, and a second tapered portion over the first tapered portion, the first tapered portion has a width variation greater than a width variation of the extending portion, and the first and second tapered portions are made of different materials.
A semiconductor device, comprising:
- a first semiconductor fin on a substrate;
- a first epitaxial layer on the first semiconductor fin;
- a first alloy cap over the first epitaxial layer, wherein the first alloy cap is made of one or more Group IV elements and one or more metal elements;
- and
- a contact plug comprising an interfacial layer in contact with the first alloy cap, and a noble metal structure in contact with the interfacial layer, wherein the interfacial layer comprises the one or more Group IV elements and a noble metal element of the noble metal structure.
A semiconductor device, comprising:
- a first semiconductor fin and a second semiconductor fin extending from a substrate;
- a first epitaxial layer wrapping around three sides of the first semiconductor fin and having a first up-slant facet facing away from the substrate and a first vertical facet extending downwardly from the first up-slant facet;
- a second epitaxial layer wrapping around three sides of the second semiconductor fin and having a second up-slant facet facing away from the substrate and a second vertical facet extending downwardly from the second up-slant facet;
- a contact plug extending downwardly from above the first and second up-slant facets of the first and second epitaxial layers to below the first and second up-slant facets of the first and second epitaxial layers and laterally between the first and second vertical facets of the first and second epitaxial layers;
- and
- a first nitridated metal silicide layer between the first epitaxial layer and the contact plug.
Dependencies are inferred from the claim text.