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US 10,854,713 B2Granted
Method for forming trench structure of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Ming Lin, Shiu-Ko Jangjian, Chun-Che Lin, Ying-Lang Wang, Wei-Ken Lin, Chuan-Pu Liu
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Abstract
A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.
Claims20
A method, comprising:
- forming a flowable dielectric layer comprising nitrogen in at least one trench of a substrate, wherein the flowable dielectric layer is in direct contact with the substrate at a sidewall of the at least one trench;
- curing the flowable dielectric layer;
- and
- annealing the cured flowable dielectric layer to form an insulation structure and a liner layer, wherein the annealing comprises a steam thermal anneal and a dry thermal anneal, the insulation structure is formed in the at least one trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer comprises nitrogen.
1 more element
A method, comprising:
- etching a substrate to form at least one trench;
- filling the at least one trench with a nitrogen-containing flowable dielectric layer;
- curing, using an oxidation treatment, the nitrogen-containing flowable dielectric layer;
- and
- performing a steam thermal annealing treatment and a dry thermal annealing treatment on the oxidized nitrogen-containing flowable dielectric layer to form an insulation structure and a liner layer, wherein a portion of the nitrogen-containing flowable dielectric layer and a portion of the substrate are converted to the liner layer after the steam thermal annealing treatment and the dry thermal annealing treatment are performed, the insulation structure is formed in the at least one trench, and the liner layer is formed between the insulation structure and the substrate.
2 more elements
A method, comprising:
- forming a plurality of trenches in a substrate, wherein the trenches define a fin having a hard mask layer over a top of the fin;
- filling the trenches with a flowable dielectric layer comprising SiONH;
- curing the flowable dielectric layer;
- and
- annealing the cured flowable dielectric layer with a steam thermal anneal and a dry thermal anneal, such that a liner comprising silicon oxynitride is formed to have a first portion between the hard mask layer and the top of the fin and a second portion between an insulation structure and the substrate.
2 more elements
Dependencies are inferred from the claim text.