Isolation structure for active devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Wei Yao, Chun Lin Tsai, Jiun-Lei Jerry Yu, Man-Ho Kwan
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Abstract
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has a channel layer disposed over a substrate and including a first material. An active layer is over the channel layer and includes a second material different than the first material. An isolation structure has a horizontally extending segment that is below the channel layer and one or more vertically extending segments that are directly over the horizontally extending segment. One or more contacts extend through the channel layer and the active layer to contact the one or more vertically extending segments.
Claims20
An integrated chip, comprising:
- a channel layer disposed over a substrate and comprising a first material;
- an active layer over the channel layer and comprising a second material different than the first material;
- an isolation structure comprising a horizontally extending segment below the channel layer and one or more vertically extending segments directly over the horizontally extending segment;
- and
- one or more contacts extending through the channel layer and the active layer to contact the one or more vertically extending segments.
An integrated chip, comprising:
- a first semiconductor material over a substrate;
- a second semiconductor material over the first semiconductor material, wherein the second semiconductor material is a different material than the first semiconductor material;
- and
- a doped region comprising a horizontally extending segment and one or more vertically extending segments protruding outward from a top of the horizontally extending segment, wherein the horizontally extending segment is arranged directly below the first semiconductor material, and wherein the one or more vertically extending segments have a top that is a non-zero distance below a top of the first semiconductor material.
An integrated chip, comprising:
- a substrate;
- a first semiconductor material over the substrate;
- a second semiconductor material over the first semiconductor material, wherein the second semiconductor material is a different compound semiconductor material than the first semiconductor material;
- an isolation structure comprising a horizontally extending segment below the first semiconductor material;
- and
- a conductive path that vertically extends through the first semiconductor material and the second semiconductor material to electrically contact the horizontally extending segment;
- and
- a dielectric layer over the second semiconductor material and laterally surrounding one or more conductive contacts that vertically contact the conductive path.
Dependencies are inferred from the claim text.