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US 10,854,708 B2Granted
Capacitor having multiple graphene structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChewn-Pu Jou, Chih-Hsin Ko, Po-Wen Chiu, Chao-Ching Cheng, Chun-Chieh Lu, Chi-Feng Huang, Huan-Neng Chen, Fu-Lung Hsueh, Clement Hsingjen Wann
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Abstract
A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first graphene structure. The capacitor further includes a second graphene structure over the dielectric layer, wherein the second graphene structure has a second plurality of graphene layers.
Claims20
A method of making a capacitor, the method comprising:
- forming a first graphene structure having a first plurality of graphene layers;
- forming a dielectric layer over the first graphene structure;
- and
- forming a second graphene structure over the dielectric layer, wherein the second graphene structure includes a second plurality of graphene layers, and wherein the first graphene structure extends laterally past a sidewall of the second graphene structure, wherein forming the second graphene structure over the dielectric layer comprises:
- forming a conductive growth layer in contact with the dielectric layer, wherein the conductive growth layer comprises a conductive material different than graphene;
- and
- forming the second graphene structure in contact with the conductive growth layer.
4 more elements
A method of making a capacitor, the method comprising:
- forming a first graphene structure having a first plurality of graphene layers, wherein the first graphene structure has a first lateral dimension measured between opposing sidewalls of the first graphene structure;
- forming a dielectric layer over the first graphene structure, the dielectric layer having a second lateral dimension measured between opposing sidewalls of the dielectric layer;
- forming a conductive growth layer on the dielectric layer;
- and
- forming a second graphene structure over the conductive growth layer, wherein the second graphene structure includes a second plurality of graphene layers, the second graphene structure having a third lateral dimension measured between opposing sidewalls of the second graphene structure, wherein the first lateral dimension is greater than the second lateral dimension and the third lateral dimension, wherein the second lateral dimension is greater than the third lateral dimension, and wherein the first graphene structure extends laterally past a sidewall of the second graphene structure.
2 more elements
A method of making a capacitor, the method comprising:
- forming a first graphene structure having a first plurality of graphene layers, wherein the first graphene structure has a first lateral dimension measured between opposing sidewalls of the first graphene structure;
- forming a dielectric layer over the first graphene structure, the dielectric layer having a second lateral dimension measured between opposing sidewalls of the dielectric layer;
- forming a conductive growth layer in contact with the dielectric layer, wherein the conductive growth layer comprises a conductive material different than graphene;
- and
- forming a second graphene structure over the conductive growth layer, wherein the second graphene structure includes a second plurality of graphene layers, the second graphene structure having a third lateral dimension measured between opposing sidewalls of the second graphene structure, wherein the first lateral dimension is greater than the second lateral dimension and the third lateral dimension, wherein the second lateral dimension is greater than the third lateral dimension, wherein a sidewall of the first graphene structure is aligned with a first sidewall of the dielectric layer, wherein a second sidewall of the dielectric layer is aligned with a sidewall of the second graphene structure.
2 more elements
Dependencies are inferred from the claim text.