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US 10,854,707 B2Granted
Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer
AssigneeSK hynix Inc.
InventorsHyangkeun Yoo, Se Ho Lee, Jae Gil Lee
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Abstract
A semiconductor device according to an embodiment includes a first electrode, a dielectric layer structure disposed on the first electrode and having a ferroelectric layer and a non-ferroelectric layer, and a second electrode disposed on the dielectric structure. The ferroelectric layer has positive and negative coercive electric fields having different absolute values. The dielectric structure has a non-ferroelectric property.
Claims20
A semiconductor device comprising:
- a first electrode;
- a dielectric structure disposed on the first electrode and having a ferroelectric layer and a non-ferroelectric layer;
- and
- a second electrode disposed on the dielectric structure,
- wherein the ferroelectric layer has positive and negative coercive electric fields having different absolute values, and,
- wherein the dielectric structure has a non-ferroelectric property.
3 more elements
A semiconductor device comprising:
- a substrate having a channel region;
- a gate dielectric structure disposed on the channel region and including a ferroelectric layer and a non-ferroelectric layer;
- and
- a gate electrode layer disposed on the gate dielectric structure,
- wherein the ferroelectric layer has a positive and a negative coercive electric field having different absolute values, and
- wherein the gate dielectric structure has a non-ferroelectric property.
3 more elements
A semiconductor device comprising:
- a gate dielectric structure disposed on a channel region of a substrate of the device, the gate dielectric structure including a ferroelectric layer and a non-ferroelectric layer;
- and
- wherein the ferroelectric layer has a first region and a first region thickness generated by a first region concentration gradient of oxygen vacancies which trap negative charge and polarize a corresponding positive charge and generate an internal electric field,
- wherein the gate dielectric structure has a paraelectric property and a controlled capacitance by a capacitance matching of the ferroelectric layer and the non-ferroelectric layer.
1 more element
Dependencies are inferred from the claim text.