Imaging device

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• a first electrode located on the insulating layer above the pixel region;
• a photoelectric conversion layer that covers the first electrode;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and connected to the first electrode;
• peripheral circuitry located in the peripheral region and connected to the detection circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, wherein
• the second electrode extends above the peripheral region,
• the second electrode includes a connection region in which the second electrode is connected to the third electrode,
• the peripheral circuitry includes digital circuitry connected to the detection circuitry,
• the connection region overlaps the digital circuitry in plan view,
• the peripheral circuitry includes analog circuitry connected between the digital circuitry and the detection circuitry, and
• the connection region does not overlap the analog circuitry in the plan view.

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• a first electrode located on the insulating layer above the pixel region;
• a photoelectric conversion layer that covers the first electrode;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and connected to the first electrode;
• peripheral circuitry located in the peripheral region and connected to the detection circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, wherein
• the second electrode extends above the peripheral region,
• the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view,
• the second electrode includes, above the peripheral region, a first region in which the photoelectric conversion layer is not present between the second electrode and the insulating layer,
• the first region includes the connection region and a non-connection region other than the connection region, and
• a shield wire located, in the plan view, between the non-connection region and the peripheral circuitry or between the non-connection region and a wire connected to the peripheral circuitry.

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• a first electrode located on the insulating layer above the pixel region;
• a photoelectric conversion layer that covers the first electrode;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and connected to the first electrode;
• peripheral circuitry located in the peripheral region and connected to the detection circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, wherein
• the second electrode extends above the peripheral region,
• the second electrode includes a connection region in which the second electrode is connected to the third electrode,
• the peripheral circuitry includes analog circuitry and digital circuitry,
• the connection region overlaps the analog circuitry in plan view, and
• the digital circuitry includes no transistor that overlaps the connection region in the plan view.