Image sensor

An image sensor comprising:

• a substrate including a first surface configured to receive incident light and a second surface opposite to the first surface;
• a floating diffusion region in the substrate adjacent to the second surface of the substrate;
• a penetration via extending through the substrate;
• a first interlayer insulating film on the second surface of the substrate;
• a first contact in the first interlayer insulating film and connected to the penetration via;
• a second contact in the first interlayer insulating film and connected to the floating diffusion region;
• and
• a transistor structure on the first interlayer insulating film,
• wherein the transistor structure includes a semiconductor layer configured to connect the first contact and the second contact, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.

An image sensor comprising:

• a substrate including a first surface and a second surface opposite to each other;
• a first floating diffusion region in the substrate;
• a first lower electrode, a first organic photoelectric conversion layer and a first upper electrode sequentially stacked on the first surface of the substrate;
• and
• a first transfer transistor on the second surface of the substrate and configured to connect the first lower electrode and the first floating diffusion region,
• wherein the first transfer transistor is spaced apart from the second surface of the substrate.