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US 10,854,668 B2Granted
Complementary metal-oxide-semiconductor image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorBo-Tsung Tsai
Life of this patent
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Abstract
A pixel including a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.
Claims20
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk;
- a floating diffusion node in the protrusion;
- a gate structure over the protrusion, wherein a top surface of the gate structure is above a top surface of the floating diffusion node;
- a photosensitive device in the bulk;
- and
- an isolation well surrounding the photosensitive device.
3 more elements
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk;
- a floating diffusion node in the protrusion;
- and
- a photosensitive device comprising a first region and a second region, wherein the first region is in the bulk and the protrusion, and the second region is in the bulk.
1 more element
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk;
- a floating diffusion node in the protrusion, wherein the floating diffusion node has a first dopant type;
- a photosensitive device comprising a first region and a second region, wherein the first region and the second region have the first dopant type, the first region is in the bulk and the protrusion, and the second region is in the bulk;
- and
- an isolation well surrounding the photosensitive device.
2 more elements
Dependencies are inferred from the claim text.