Back side illumination image sensors having an infrared filter
AssigneeSamsung Electronics Co., Ltd.
InventorsYun Ki Lee, Jong Hoon Park, Jun Sung Park
Life of this patent
Estimating the term…
Abstract
Back side illumination (BSI) image sensors are provided. A BSI image sensor includes a substrate and a plurality of pixels configured to generate electrical signals responsive to light incident on the substrate. Each of the plurality of pixels includes a photodiode, an infrared radiation (IR) cut-off filter above the photodiode, a light shield pattern above the photodiode and including an opening corresponding to an area of 1 to 15% of each of the plurality of pixels, a planarization layer on the light shield pattern, and a lens on the planarization layer.
Claims20
An image sensor comprising:
- a substrate;
- a photodiode in the substrate;
- a first opening above the photodiode;
- an infrared ray (IR) cut-off filter layer disposed above the first opening;
- a light cut-off filter layer formed above the IR cut-off filter layer, wherein the light cut-off filter layer includes a second opening;
- a planarization layer disposed above the light cut-off filter layer;
- and
- a lens corresponding to the photodiode;
- wherein the second opening is vertically aligned with the first opening,
- wherein the IR cut-off filter comprises a plurality of layers and any one of the plurality of layers has a refractive index in a range of 1.2 to 1.8.
An image sensor comprising:
- a substrate;
- and
- a plurality of pixels configured to generate electrical signals responsive to light,
- wherein each of the plurality of pixels comprises:
- a photodiode;
- a first opening above the photodiode;
- an infrared radiation (IR) cut-off filter layer disposed above the first opening;
- a light cut-off filter layer disposed above the IR cut-off filter layer, wherein the light cut-off filter layer includes a second opening;
- a planarization layer disposed above the light cut-off filter layer;
- and
- a lens disposed above the planarization layer;
- wherein the second opening is vertically aligned with the first opening,
- wherein a vertical projection of the first opening corresponds to 1 to 15% of an area of each of the plurality of pixels.
An image sensor comprising:
- a substrate;
- and
- a plurality of pixels configured to generate electrical signals responsive to light,
- wherein each of the plurality of pixels comprises:
- a photodiode;
- a first opening above the photodiode;
- an infrared radiation (IR) cut-off filter layer disposed above the first opening;
- a light cut-off filter layer disposed above the IR cut-off filter layer, wherein the light cut-off filter layer includes a second opening;
- a planarization layer disposed above the light cut-off filter layer;
- and
- a lens disposed above the planarization layer;
- wherein the second opening is vertically aligned with the first opening,
- wherein the IR cut-off filter layer comprises a plurality of layers and the plurality of layers are formed with different thicknesses.
Dependencies are inferred from the claim text.