Short-wave infrared detector array and method for the manufacturing thereof

A short-wave infrared (SWIR) detector array (1), comprising at least one SWIR light conversion layer (10) having a free surface forming an incident light surface (1a) of the detector array (1), and a doped readout wafer (20) being either p-doped or n-doped comprising:

• an array of charge collecting areas (24) being either p-doped or n-doped charge collecting areas (24);
• a readout layer (20c) comprising an electrical circuit (22) and defining a detector lower surface (1b) opposite the incident light surface (1a), said SWIR detector array being configured to detect electromagnetic waves having a wavelength comprised between 1.0 μm and 3.0 μm, wherein
• said SWIR detector array (1) further comprises a support layer (40) to its incident light side, said support layer (40) comprising silicon and being either p-doped or n-doped, the doping of said support layer (40) being different with respect to the doping of said doped readout wafer (20),
• said SWIR detector array (1) further comprises an intermediate layer (30) comprising a p-n junction and a bonding interface (1c-1d), said intermediate layer (30) being arranged in between said support layer (40) and said readout wafer (20),
• said SWIR light conversion layer (10) has a Ge 1-xSnx alloy composition and comprises, to the side away from said intermediate layer (30) a doped contact layer (10c) having a similar doping as said support layer (40), said doped contact layer (10c) being covered by an electrical contact layer (50).