Semiconductor apparatus and method of manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorToshihiro Shoyama
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Abstract
A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.
Claims21
A method of manufacturing a semiconductor apparatus, comprising:
- forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face;
- forming a first region by implanting ions in the semiconductor substrate through the first trench;
- forming a first insulator in the first trench after the forming the first region;
- and
- forming a second trench on the side of the first face of the semiconductor substrate after the forming the first insulator,
- wherein a depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.
A method of manufacturing a semiconductor apparatus, comprising:
- preparing a semiconductor substrate having a first face and a second face;
- forming a first trench on a side of the first face of the semiconductor substrate;
- forming a first region by implanting carbon ions in the semiconductor substrate through the first trench;
- forming a first insulator in the first trench;
- and
- forming a second trench on a side of the first face of the semiconductor substrate after the forming the first insulator,
- wherein a depth of a bottom surface of the second trench with reference to the first face is smaller than that of the first trench with reference to the first face.
Dependencies are inferred from the claim text.