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US 10,854,645 B2Granted
Method for fabricating thin film transistor substrate
AssigneeSamsung Display Co., Ltd.
InventorsJun Hee Lee, Sung Hoon Moon, Dong Hyun Son, Pil Soo Ahn, Kohei Ebisuno, Sang Hoon Oh
Life of this patent
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Abstract
A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.
Claims18
A method for fabricating a thin film transistor substrate, the method comprising:
- forming a buffer layer including at least one film on a base substrate;
- planarizing a surface of the buffer layer;
- and
- forming a thin film transistor on the buffer layer.
1 more element
A method for fabricating a thin film transistor substrate, the method comprising:
- forming a first inorganic film of a buffer layer directly on a substrate;
- planarizing a top surface of first inorganic film;
- and
- forming a thin film transistor directly on the buffer layer, the thin film transistor including a semiconductor layer directly on the buffer layer, a gate electrode overlapping the semiconductor layer with a gate insulating film interposed therebetween, and a source electrode and a drain electrode connected to the semiconductor layer and spaced apart from the each other.
1 more element
Dependencies are inferred from the claim text.