US 10,854,628 B2 · Three-dimensional memory device and manufacturing method thereof

Abstract

A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. A vertical structure is formed penetrating the alternating dielectric stack in a vertical direction. A bottom dielectric layer of the alternating dielectric stack is removed. An epitaxial layer is formed between the substrate and the alternating dielectric stack after removing the bottom dielectric layer. An insulating layer is formed on the epitaxial layer. The insulating layer is located between the epitaxial layer and the alternating dielectric stack. The influence of the step of forming the vertical structure on the epitaxial layer may be avoided, and defects at the interface between the epitaxial layer and the bottom dielectric layer may be avoided accordingly.

Claims12

Dependent claims

A manufacturing method of a three-dimensional (3D) memory device, comprising:

forming an alternating dielectric stack on a substrate;
forming a vertical structure penetrating the alternating dielectric stack in a vertical direction perpendicular to a surface of the substrate;
removing a bottom dielectric layer of the alternating dielectric stack;
forming an epitaxial layer between the substrate and the alternating dielectric stack after removing the bottom dielectric layer;
and
forming an insulating layer on the epitaxial layer, wherein the insulating layer is located between the epitaxial layer and the alternating dielectric stack, and the epitaxial layer is separated from the alternating dielectric stack by a gap before forming the insulating layer.

3 more elements

Dependencies are inferred from the claim text.

Three-dimensional memory device and manufacturing method thereof

Life of this patent

Three-dimensional memory device and manufacturing method thereof

Life of this patent

Abstract

Claims12