Methods for forming three-dimensional memory device having channel structures with native oxide layer

Abstract

Embodiments of 3D memory device having channel structures with a native oxide layer and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes interleaved first dielectric layers and second dielectric layers on a substrate. An opening extending vertically through the dielectric stack is formed. A native oxide layer is formed along a sidewall of the opening. The native oxide layer includes native oxide of at least some of the first dielectric layers. A deposited oxide layer, a storage layer, a tunneling layer, and a semiconductor channel are subsequently formed in this order over the native oxide layer and along the sidewall of the opening. A memory stack includes interleaved conductor layers and the second dielectric layers is formed by replacing, with the conductor layers, the first dielectric layers in the dielectric stack.

Dependencies are inferred from the claim text.