Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• sequentially forming a mold layer, a support layer, and a mask pattern on a whole surface of a substrate, the substrate having a cell area defined by a core area, and a lower conductive structure and at least one interconnector in contact with the lower conductive structure being on the cell area of the substrate under the mold layer;
• partially removing the support layer and the mold layer by an etching process using the mask pattern as an etching mask to form a mold pattern and a support pattern on the mold pattern, such that a contact hole is formed through the support pattern and the mold pattern to expose the at least one interconnector in the cell area;
• forming a lower electrode layer on the mask pattern to fill the contact hole and to cover the mask pattern;
• forming an electrode pattern in the contact hole by removing a portion of the lower electrode layer, such that a top surface of the electrode pattern is lower than that of the mask pattern;
• and
• forming a lower electrode for a capacitor in the contact hole by removing a portion of the electrode pattern and by exposing the support pattern having a substantially same thickness as the support layer such that the lower electrode is supported by the support pattern and is in contact with the interconnector.