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US 10,854,613 B2Granted
Buried word line of a dynamic random access memory and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Chun-Hsien Lin, Fu-Che Lee
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Abstract
A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a first doped region in a substrate; removing part of the first doped region to form a trench in the substrate; forming a gate structure in the trench; and forming a barrier structure between the gate structure and the first doped region.
Claims5
A buried word line (BWL) of a dynamic random access memory (DRAM), comprising:
- a trench in a substrate;
- a first doped region adjacent to two sides of the trench;
- a gate structure in the trench, wherein the gate structure comprises:
- a conductive layer in the trench;
- a gate dielectric layer between the conductive layer and the substrate;
- and
- a barrier structure in the substrate adjacent to two sides of the trench, wherein the barrier structure overlaps the first doped region and the substrate.
4 more elements
Dependencies are inferred from the claim text.