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US 10,854,609 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorAkira Tanabe
Life of this patent
Estimating the term…
Abstract
Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.
Claims7
A semiconductor device comprising:
- a circuit including an n-channel type MOSFET and a p-channel type MOSFET and having an active state and a stand-by state;
- an n-type well for the p-channel type MOSFET, the n-type well being applied with a power supply voltage of the circuit in the active state and being applied with a voltage higher than the power supply voltage in the stand-by state;
- a p-type well for the n-channel type MOSFET, the p-type well being applied with a ground voltage of the circuit in the active state and being applied with a voltage lower than the ground voltage in the stand-by state;
- a path which electrically couples the n-type well and the p-type well when the circuit shifts from the stand-by state to the active state;
- and
- a switch which couples the n-type well and the p-type well with the path,
- wherein the switch includes a first switch, a second switch, and a third switch,
- wherein the n-type well includes a first region coupled to the path via the first switch and a second region not coupled to the path,
- wherein the p-type well includes a third region coupled to the path via the second switch and a fourth region coupled to the path via the third switch, and
- wherein, while the first switch, the second switch, and the third switch are on, the first region of the n-type well, the third region of the p-type well and the fourth region of the p-type well are coupled via the path.
7 more elements
Dependencies are inferred from the claim text.