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US 10,854,598 B2Granted
Semiconductor diode
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Philipp Seng
Life of this patent
Estimating the term…
Abstract
A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor.
Claims20
A semiconductor boot-strap diode with an integrated charge current resistor, comprising:
- a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
- a cathode electrode;
- a cathode zone of a first conduction type;
- an anode zone of a second conduction type;
- a p-n junction between the cathode zone and the anode zone;
- and
- a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and having a surface disposed on and uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body and forming no p-n junction therewith, and the resistance layer providing an integrated charge current resistor where the resistance layer is in resistive contact with the cathode emitter zone.
4 more elements
A bridge circuit, comprising:
- a low side driver for at least one low side power transistor, the low side driver including a power controller;
- a high side driver for at least one high side power transistor, the high side driver including a capacitor providing a power supply for the high side driver;
- and
- a semiconductor boot-strap diode including:
- a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
- a cathode electrode;
- a cathode zone of a first conduction type coupled to a cathode electrode;
- an anode zone of a second conduction type coupled to an anode electrode;
- at least one p-n junction between the cathode zone and the anode zone;
- and
- a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and having a surface disposed on and uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body and forming no p-n junction therewith, the resistance layer providing an integrated charge current resistor where the resistance layer is in resistive contact with the cathode emitter zone;
- wherein the cathode electrode is electrically coupled to the capacitor and wherein the anode electrode is electrically coupled to the power controller via the integrated charge current resistor of the semiconductor boot-strap diode.
9 more elements
A semiconductor boot-strap diode with an integrated charge current resistor, comprising:
- a semiconductor body having a front surface and a back surface and including a cathode emitter zone defining the back surface;
- a cathode electrode;
- at least one cathode zone of a first conduction type;
- at least one anode zone of a second conduction type;
- at least one p-n junction between the cathode zone and the anode zone;
- and
- a single unitary resistance layer disposed between the cathode emitter zone and the cathode electrode, the unitary resistance layer in direct contact with the cathode electrode and forming a non-pn junction interface with the cathode emitter zone uninterruptedly extending over the entire back surface at the cathode emitter zone of the semiconductor body, and the resistance layer providing an integrated charge current resistor.
4 more elements
Dependencies are inferred from the claim text.