Semiconductor device and layout thereof

A semiconductor device, comprising:

• a first continuous fin formed on a first area of a substrate;
• a second fin formed on the first area, wherein the second fin comprises separate portions that are spaced apart by a first recess;
• and
• a plurality of continuous gates each disposed across the first area and a second area of the substrate, and each disposed across the first continuous fin, wherein at least two of the plurality of continuous gates are disposed across the first recess such that an entirety of a portion of each of the plurality of continuous gates that is disposed across the first recess is within an area surrounded by sides of the first recess, and the plurality of continuous gates comprise a first number of gates, a second number of gates, and a third number of gates,
• wherein a side of the second area facing the first recess is substantially flat, and
• the first number of gates across the first continuous fin is equal to a sum of the second number of gates across the second fin and the third number of gates across the first recess.

A semiconductor device, comprising:

• a first continuous fin on a substrate;
• a second continuous fin on the substrate;
• a first fin disposed between the first continuous fin and the second continuous fin, wherein the first fin comprises separate portions that are spaced apart by a first recess having a recess area that is surrounded by sides of the first recess;
• a second fin disposed between the first fin and the second continuous fin, wherein the second fin comprises separate portions that are spaced apart by a second recess;
• and
• a plurality of gates each disposed across the first continuous fin and the second continuous fin,
• wherein each of the first continuous fin and the second continuous fin extends from a first gate in the plurality of gates to a second gate in the plurality of gates, and the first fin extends from the first gate to the second gate and is disposed between the first gate and the second gate, and
• at least one of the plurality of gates is disposed across the first recess such that an entirety of a portion of the at least one of the plurality of gates is disposed within the recess area.