Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHisashi Toyoda, Koichi Yamazaki, Koichi Arai, Tatsuhiro Seki
Life of this patent
Estimating the term…
Loading patent…
AssigneeRenesas Electronics Corporation
InventorsHisashi Toyoda, Koichi Yamazaki, Koichi Arai, Tatsuhiro Seki
Estimating the term…
A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the first gate electrode. The first source electrode of the junction FET is electrically connected to the second drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series, and the voltage applying unit applies a second voltage with a polarity opposite to that of a first voltage applied to the first gate electrode when the junction FET is brought into an off-state, to the first gate electrode when the MOSFET is in an on-state.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.