Semiconductor structure along with multiple chips bonded through microbump and manufacturing method thereof

A method for manufacturing a semiconductor structure, comprising:

• receiving a second chip having a metal pad in a top surface of the second chip;
• forming a microbump on the metal pad;
• receiving a first chip having a pad and a plurality of conductive lines embedded in a top surface of the first chip, wherein a sidewall of one of the plurality of conductive lines exposed by a first dielectric etching operation;
• and
• bonding the first chip and the second chip through the microbump while maintaining a distance between the top surface of the first chip and the top surface of the second chip and thereby forming an air gap.

A method for manufacturing a semiconductor structure, comprising:

• receiving a first die having a first dielectric surface and a metal pad in proximity to the first dielectric surface;
• forming a microbump having a planar top surface on the metal pad;
• receiving a second die having a plurality of conductive lines protruded from a second dielectric surface of the second die, wherein an etch stop layer in the second die is exposed by a first dielectric etching operation;
• and
• bonding the first die and the second die through the microbump while maintaining a distance between the first dielectric surface and the second dielectric surface and thereby forming an air gap.