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US 10,854,574 B2Granted
Forming metal bonds with recesses
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Hsien-Wei Chen, Sung-Feng Yeh, Wen-Chih Chiou
Life of this patent
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Abstract
A method includes forming a first device die, which includes depositing a first dielectric layer, and forming a first metal pad in the first dielectric layer. The first metal pad includes a recess. The method further includes forming a second device die including a second dielectric layer and a second metal pad in the second dielectric layer. The first device die is bonded to the second device die, with the first dielectric layer being bonded to the second dielectric layer, and the first metal pad being bonded to the second metal pad.
Claims19
A device comprising:
- a first device die comprising:
- a first dielectric layer;
- and
- a first metal pad comprising:
- a diffusion barrier contacting the first dielectric layer;
- and
- a metallic material between opposite portions of the diffusion barrier, wherein in a cross-sectional view of the first metal pad, an edge portion of the metallic material is recessed from a top edge of a nearest portion of the diffusion barrier to form an air gap;
- and
- a second metal pad, wherein top surfaces of the first metal pad and the second metal pad are coplanar, and the second metal pad comprises an additional diffusion barrier and an additional metallic material, wherein an additional edge portion of the additional metallic material is recessed from an additional top edge of the additional diffusion barrier to form an additional air gap;
- a second device die comprising:
- a second dielectric layer bonded to the first dielectric layer;
- and
- a third metal pad bonded to the first metal pad through metal-to-metal direct bonding;
- a dielectric etch stop layer comprising:
- a horizontal portion contacting a top surface of the second metal pad;
- and
- a vertical portion contacting a sidewall of the second device die;
- a dielectric region over and contacting the horizontal portion of the dielectric etch stop layer;
- and
- a through-via penetrating through the dielectric etch stop layer and the dielectric region to contact the second metal pad.
17 more elements
A device comprising:
- a first die comprising:
- a semiconductor substrate;
- a first dielectric layer over and contacting the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate;
- and
- a first metal pad in the first dielectric layer;
- a second die over the first die and bonded to the first die to form a first interface therebetween, the second die comprising:
- a second dielectric layer;
- and
- a second metal pad in the second dielectric layer and bonded to the first metal pad, wherein an air gap is formed at a joining point of the first metal pad and the second metal pad, with at least one of the first metal pad and the second metal pad exposing to the air gap;
- and
- a gap filling dielectric material encapsulating the second die therein, wherein the gap filling dielectric material comprises a bottom surface contacting a top surface of the first die to form a second horizontal interface coplanar with the first interface.
9 more elements
A device comprising:
- a first package component comprising:
- a first dielectric layer;
- and
- a first metal feature extending into the first dielectric layer, the first metal feature comprising:
- a first diffusion barrier;
- and
- a first metallic material between opposite portions of the first diffusion barrier;
- and
- a second package component comprising:
- a second dielectric layer bonded to the first dielectric layer through fusion bonding;
- and
- a second metal feature bonded to the first metal feature through metal-to-metal direct bonding, wherein the second metal feature comprises:
- a second diffusion barrier;
- and
- a second metallic material between opposite portions of the second diffusion barrier;
- and
- an air gap, with the first diffusion barrier, the second diffusion barrier, the first dielectric layer, and the first metallic material being exposed to the air gap, wherein both of a top edge and an inner sidewall of the first diffusion barrier are exposed to the air gap, and wherein the inner sidewall faces the first metallic material.
14 more elements
Dependencies are inferred from the claim text.