Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiun Yi Wu, Chen-Hua Yu, Chung-Shi Liu, Chien-Hsun Lee
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Abstract
A method of forming a semiconductor device includes arranging a semi-finished substrate, which has been tested and is known to be good, on a carrier substrate. Encapsulating the semi-finished substrate in a first encapsulant and arranging at least one semiconductor die over the semi-finished substrate. Electrically coupling at least one semiconductor component of the at least one semiconductor die to the semi-finished substrate and encasing the at least one semiconductor die and portions of the first encapsulant in a second encapsulant. Removing the carrier substrate from the semi-finished substrate and bonding a plurality of external contacts to the semi-finished substrate.
Claims20
A method of forming a semiconductor device, the method comprising:
- arranging a plurality of interconnect structures on a carrier substrate to form a reconstructed wafer, wherein each of the plurality of interconnect structures comprises:
- a substrate;
- and
- a conductive layer embedded in a dielectric layer, the dielectric layer is arranged between the substrate and the carrier substrate;
- encapsulating the plurality of interconnect structures in a first encapsulant;
- electrically coupling at least one semiconductor component of each of a plurality of semiconductor dies to one or more of the plurality of interconnect structures;
- encasing the plurality of semiconductor dies and portions of the first encapsulant in a second encapsulant to form a wafer level package;
- removing the carrier substrate from the plurality of interconnect structures;
- and
- bonding a plurality of external contacts to first sides of the plurality of interconnect structures.
A method of forming a semiconductor device, the method comprising:
- forming a through-substrate via (TSV) in a first substrate of an interconnect structure;
- after forming the TSV arranging the interconnect structure on a carrier substrate;
- embedding the interconnect structure in a first encapsulant to form a reconstructed wafer;
- forming a series of redistribution layers over the interconnect structure, wherein each of the redistribution layers includes a plurality of conductive layers embedded in a dielectric layer;
- bonding a plurality of semiconductor dies to the series of redistribution layers, wherein at least one of the plurality of semiconductor dies is electrically connected through the series of redistribution layers to the interconnect structure;
- and
- encasing the plurality of semiconductor dies and portions of a surface of the first encapsulant that is opposite the carrier substrate in a second encapsulant to form a wafer level package.
A method of manufacturing a semiconductor device, the method comprising:
- forming a reconstructed wafer with a plurality of semi-finished substrates embedded in a first encapsulant, wherein each of the plurality of semi-finished substrates comprises:
- a first substrate;
- and
- a conductive layer embedded in a dielectric layer, wherein the dielectric layer is arranged between the first substrate and a carrier substrate;
- electrically connecting a plurality of semiconductor dies to one or more of the plurality of semi-finished substrates;
- encasing the plurality of semiconductor dies with a second encapsulant to form a wafer level package;
- and
- bonding a plurality of external contacts to the plurality of semi-finished substrates, the plurality of external contacts being electrically coupled to at least one semiconductor component of the plurality of semiconductor dies.
Dependencies are inferred from the claim text.