Redistribution layers with carbon-based conductive elements, methods of fabrication and related semiconductor device packages and systems

A method for fabricating a semiconductor device package, the method comprising:

• forming a conductive carbon-based material on a conductive seed material on a sacrificial substrate;
• inverting the sacrificial substrate;
• bonding the sacrificial substrate to a wafer comprising a device region of a semiconductor die comprising circuitry;
• after the bonding, removing the sacrificial substrate to leave the conductive carbon-based material and the conductive seed material over the wafer;
• forming conductive elements from the conductive carbon-based material and the conductive seed material;
• and
• forming a passivation material vertically adjacent the conductive seed material and between the conductive elements,
• the method forming the semiconductor device package comprising:
• a redistribution layer including the conductive elements comprising the conductive carbon-based material and the conductive seed material on the conductive carbon-based material, the conductive elements of the redistribution layer defining a vertical height of less than about 0.2 μm, the vertical height being a maximum total vertical thickness of the conductive carbon-based material and the conductive seed material of the conductive elements of the redistribution layer;
• the passivation material vertically adjacent the conductive seed material and between the conductive elements of the redistribution layer, the passivation material defining another vertical height of less than about 0.2 μm, the other vertical height being a maximum vertical thickness of the passivation material vertically adjacent the conductive seed material of the conductive elements of the redistribution layer;
• and
• the device region of the semiconductor die comprising the circuitry connected to the conductive elements of the redistribution layer, conductive plugs of the device region being in direct contact with the conductive carbon-based material of the redistribution layer,
• the conductive seed material being directly vertically between the conductive carbon-based material and at least one portion of the passivation material.

A method for fabricating a semiconductor device package, the method comprising:

• forming an initial support wafer comprising:
• forming a conductive seed material on a sacrificial substrate;
• and
• forming a conductive carbon-based material on the conductive seed material;
• bonding a surface of the initial support wafer to another wafer comprising a device region of a semiconductor die comprising circuitry;
• removing the sacrificial substrate;
• and
• forming conductive elements from the conductive carbon-based material and the conductive seed material;
• and
• forming a passivation material vertically adjacent the conductive carbon-based material and between the conductive elements,
• the method forming the semiconductor device package comprising:
• a redistribution layer including the conductive elements comprising the conductive carbon-based material and the conductive seed material on the conductive carbon-based material, the conductive elements of the redistribution layer defining a vertical height of less than about 0.2 μm, the vertical height being a maximum total vertical thickness of the conductive carbon-based material and the conductive seed material of the conductive elements of the redistribution layer;
• the passivation material vertically adjacent the conductive seed material and between the conductive elements of the redistribution layer, the passivation material defining another vertical height of less than about 0.2 μm, the other vertical height being a maximum vertical thickness of the passivation material vertically adjacent the conductive seed material of the conductive elements of the redistribution layer;
• and
• the device region of the semiconductor die comprising the circuitry connected to the conductive elements of the redistribution layer, conductive plugs of the device region being in direct contact with the conductive carbon-based material of the redistribution layer,
• the conductive seed material being directly vertically between the conductive carbon-based material and at least one portion of the passivation material.

A redistribution layer comprising:

• at least one level of conductive elements comprising a carbon-based material and a seed material directly above the carbon-based material, the conductive elements of a level of the at least one level defining a height, between a lower surface of the carbon-based material and an upper surface of the seed material, of less than about 0.2 μm;
• and
• a passivation material above the seed material and laterally adjacent the conductive elements, the upper surface of the seed material of the conductive elements being directly accessible, through an opening defined in the passivation material, to other conductive materials,
• the lower surface of the carbon-based material being coplanar with a lower surface of the passivation material.

An electronic system comprising:

• at least one input device;
• at least one output device;
• a processor device operably coupled to the at least one input device and to the at least one output device;
• and
• a semiconductor device comprising:
• at least one memory die;
• a redistribution layer comprising conductive elements of a conductive carbon-based material and a conductive seed material directly above the conductive carbon-based material, the conductive elements defining a height of less than about 0.2 μm between a lower surface of the conductive carbon-based material and an upper surface of the conductive seed material, the conductive carbon-based material being in direct contact with at least one conductive plug of the at least one memory die;
• and
• a passivation material above and electrically isolating the conductive elements of the redistribution layer and also defining a height of less than about 0.2 μm between the upper surface of the conductive seed material and an upper surface of the passivation material.