Semiconductor device and manufacturing method therefor

A semiconductor device comprising:

• a substrate having a first surface;
• a first wiring layer arranged above the first surface of the substrate;
• a first insulating film covering the first wiring layer;
• a lower oxidation preventing film arranged on the first insulating film;
• a plurality of thin-film resistors arranged on the lower oxidation preventing film;
• an upper oxidation preventing film arranged on the plurality of thin-film resistors;
• a second insulating film covering the lower oxidation preventing film, the plurality of thin-film resistors, and the upper oxidation preventing film;
• a second wiring layer arranged on the second insulating film that covers the lower oxidation preventing film, the plurality of thin-film resistors, and the upper oxidation preventing film;
• and
• a third insulating film covering the second wiring layer, wherein:
• a sidewall of each of the plurality of thin-film resistors contacts the second insulating film;
• the plurality of the thin-film resistors are sequentially arranged along one direction in a plane direction of the substrate;
• the plurality of thin-film resistors provide a pair resistor, functioning as first and second voltage dividing resistors, that divides a predetermined voltage;
• the pair resistor is provided by a part of the plurality of the thin-film resistors, the part being positioned on an inner side of two of the plurality of the thin-film resistors arranged at both ends of the plurality of the thin-film resistors in the one direction;
• at least one of the first and second voltage dividing resistors of the pair resistor is provided by multiple thin-film resistors which are electrically connected in parallel to each other;
• the first wiring layer overlaps an end portion of each of the plurality of thin-film resistors when viewed in a normal direction of the first surface of the substrate;
• the first wiring layer overlaps at least a part of a longer side of each of the plurality of thin-film resistors along an extension direction in which each of the plurality of thin-film resistors extends and does not overlap a shorter side of each of the plurality of thin-film resistors along a direction different from the extension direction;
• a longitudinal direction of the first wiring layer is parallel with a longitudinal direction of each of the plurality of thin-film resistors;
• the extension direction is the longitudinal direction of each of the plurality of thin film resistors;
• the first wiring layer includes a plurality of first wiring layers;
• and
• the longitudinal direction of each of the plurality of first wiring layers is parallel with the longitudinal direction of each of the plurality of thin-film resistors.