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AssigneeMitsubishi Electric Corporation
InventorsSaburo Tanaka, Tomoaki Shimano, Masaki Kato, Jun Tahara, Tatsuya Fukase
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Provided is a small-sized power semiconductor device in which interference between power modules adjacently disposed is prevented and the areas of the gaps occurring between the power modules are reduced. In a power semiconductor device formed by adjacently disposing power modules in an arc shape on a heat sink, each of which power modules is obtained by sealing, with a mold resin, a switchable power semiconductor chip, a lead frame in which potential leads and signal terminals connected to the power semiconductor chip are formed, and a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame, any one of the adjacent power modules is formed in a pentagonal shape having, at a portion adjacent to the other power module, an oblique side 10a obtained by cutting out one corner of a quadrangle.
A power semiconductor device formed by adjacently disposing a plurality of power modules in along an arc on a heat sink, each power module being obtained by sealing, with a mold resin, a switchable power semiconductor chip, a lead frame in which a potential lead and a signal terminal connected to the power semiconductor chip are formed, and a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame, wherein
A power module comprising:
Dependencies are inferred from the claim text.