US 10,854,523 B2 · Semiconductor device

Abstract

A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Claims16

Dependent claims

A semiconductor device comprising:

a substrate;
a heat generating portion provided on the substrate;
a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate;
mold resin covering at least the cap substrate;
and
a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/316,108Filed 24 Oct 2016

Published

US 2020/0185285 A111 Jun 2020

Granted

1 Dec 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification56 codes

H10W 76/161
Characterised by their shape: containers comprising no base
H10W 40/10
Arrangements for thermal protection or thermal control: arrangements for heating
H10W 42/20
Arrangements for protection of devices: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
H10W 74/016
Manufacture or treatment: using moulds

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims16