Method for forming semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsChia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Chun-Hsien Lin, Wei-Hao Huang, Kai-Teng Cheng
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Abstract
The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.
Claims9
A method for forming a semiconductor structure, comprising:
- providing a substrate, a first region and a second region are defined thereon;
- forming a gate dielectric layer, a first bottom barrier layer, a second bottom barrier layer and a work function metal layer sequentially on the substrate within the first region and within the second region, wherein a material of the first bottom barrier layer is different from a material of the second bottom barrier layer;
- forming a dielectric layer on the work function metal layer within the second region;
- performing a hydrogen gas treatment on the substrate, wherein the hydrogen gas treatment is performed after the dielectric layer is formed;
- and
- removing the work function metal layer within the first region.
Dependencies are inferred from the claim text.