Back to results
US 10,854,511 B2Granted
Methods of lowering wordline resistance
AssigneeApplied Materials, Inc.
InventorsYihong Chen, Yong Wu, Chia Cheng Chin, Xinliang Lu, Srinivas Gandikota, Ziqing Duan, Abhijit Basu Mallick
Life of this patent
Estimating the term…
Abstract
Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.
Claims14
A processing method comprising:
- recessing a poly-Si layer in a gap between spaced oxide layers to a depth below a top surface of the spaced oxide layers to expose sides of the oxide layers within the gap;
- forming a liner on the top surface and the exposed sides of the spaced oxide layers and not directly on a top surface of the recessed poly-Si layer;
- and
- depositing a metal layer in the gap on the liner to form wordlines.
1 more element
A processing method comprising:
- providing a substrate surface with a plurality of spaced oxide layers with gaps between the spaced oxide layers and poly-Si layers in the gaps between the spaced oxide layers;
- recessing the poly-Si layer to a depth below a top surface of the spaced oxide layers to expose sides of the spaced oxide layers within the gap;
- forming a TiN liner on the top surface and the exposed sides of the spaced oxide layers and not directly on a top surface of the recessed poly-Si layer, the liner having a thickness in the range of about 20 Å to about 50 Å;
- and
- depositing a tungsten layer in the gaps on the liner to form wordlines, depositing the tungsten layer comprises exposing the substrate to a tungsten precursor and a reactant, the tungsten precursor comprises one or more of WF6, WCl6 or WCl5 and the reactant comprises H2.
2 more elements
Dependencies are inferred from the claim text.