Method for making electrical connection structure having alternating yttrium oxide and silicon oxide films
AssigneeHon Hai Precision Industry Co., Ltd.
InventorsChin-Yueh Liao, Chia-Lin Liu, Yan-Tang Dai, Hung-Che Lu
Life of this patent
Estimating the term…
Abstract
A method for making an electrical connection structure includes: providing a substrate; forming a mating layer on the substrate; forming a connecting pad on the mating layer; forming a connecting line on the connecting pad and electrically coupling to the connecting pad; forming a covering layer covering the connecting line; and light irradiating the covering layer. Both the connecting pad and the connecting line are made of a metal or an alloy. The mating layer includes alternating yttrium oxide films and silicon oxide films.
Claims10
A method for making an electrical connection structure, comprising:
- providing a substrate;
- forming a mating layer on the substrate, the mating layer comprising yttrium oxide films and silicon oxide films alternating with each other;
- forming a connecting pad on the mating layer;
- forming a connecting line on the connecting pad, the connecting line electrically coupling to the connecting pad, both the connecting pad and the connecting line made of metal;
- forming a covering layer covering the connecting line;
- and
- irradiating light onto the covering layer.
A method for making a thin film transistor (TFT) substrate, comprising:
- providing a substrate;
- forming a mating layer on the substrate, the mating layer comprising yttrium oxide films and silicon oxide films alternating with each other;
- forming a TFT on the mating layer, the TFT comprising a gate electrode, a source electrode, and a drain electrode on the mating layer, the gate electrode, the source electrode, and the drain electrode made of metal or alloy;
- forming a covering layer covering the TFT;
- and
- irradiating light onto the covering layer by a mask.
Dependencies are inferred from the claim text.