Interconnection structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Wen Wu, Shiu-Ko Jangjian, Chien-Wen Chiu, Chien-Chung Chen
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Abstract
An interconnection structure includes a first dielectric layer, a bottom conductive feature present in the first dielectric layer, a second dielectric layer present on the first dielectric layer, an aluminum-containing etch stop layer present between the first dielectric layer and the second dielectric layer, an upper conductive via present at least in the second dielectric layer and electrically connected to the bottom conductive feature, and at least one aluminum-containing fragment present at least at a bottom corner of the upper conductive via.
Claims20
An interconnection structure, comprising:
- a conductive feature;
- a first dielectric layer over the conductive feature;
- a conductor over the conductive feature and present between a first portion of the first dielectric layer and a second portion of the first dielectric layer;
- and
- a plurality of fragments comprising metal, wherein:
- a first portion of the plurality of fragments is present between the conductive feature and the conductor, and
- a density of the fragments present at a first portion of a top surface of the conductive feature is different than a density of the fragments present at a second portion of the top surface of the conductive feature.
A method of manufacturing an interconnection structure, comprising:
- forming a conductive feature;
- forming a first etch stop layer over the conductive feature, wherein the first etch stop layer comprises metal;
- forming a first dielectric layer over the first etch stop layer;
- etching the first dielectric layer and the first etch stop layer to define a hole exposing the conductive feature, wherein etching the first etch stop layer resputters fragments comprising the metal onto the conductive feature such that a density of the fragments present at a first portion of a top surface of the conductive feature is different than a density of the fragments present at a second portion of the top surface of the conductive feature;
- and
- forming a conductor in the hole and over the fragments.
An interconnection structure, comprising:
- a conductive feature;
- a first dielectric layer in contact with a sidewall of the conductive feature;
- a first etch stop layer comprising a metal;
- a second dielectric layer, wherein the first etch stop layer is present between the first dielectric layer and the second dielectric layer;
- a conductor present between a first portion of the second dielectric layer and a second portion of the second dielectric layer;
- and
- a plurality of fragments comprising the metal, wherein:
- a first portion of the plurality of fragments is present on a sidewall of the first portion of the second dielectric layer facing the conductor, and
- a density of the fragments decreases with an increasing distance from the conductive feature.
Dependencies are inferred from the claim text.