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US 10,854,507 B2Granted
Method of forming trenches
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
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Abstract
A method of forming a semiconductor device includes forming a material layer over a substrate and forming a first trench in the material layer, forming a conformal capping layer along sidewalls of the first trench, forming a second trench in the material layer while the capping layer is disposed along sidewalls of the first trench and forming a conductive feature within the first trench and the second trench.
Claims20
A method comprising:
- forming an extra-low k dielectric layer over a substrate;
- forming a first trench in the extra-low k dielectric layer, the extra-low k dielectric defining a sidewall of the first trench;
- forming a non-carbon-containing layer directly on the sidewall of the first trench;
- forming a second trench in the extra-low k dielectric layer while the non-carbon-containing layer is disposed on the sidewall of the first trench;
- and
- after the forming of the second trench, extending the first trench to expose a portion of the substrate within the first trench.
3 more elements
A method comprising:
- forming a dielectric layer over a substrate;
- forming a first patterned material layer over the dielectric layer, the first patterned material layer having a first opening;
- forming a second patterned material layer over the first patterned material layer, the second patterned material layer having a second opening that is disposed over the first opening;
- removing a first portion of the dielectric layer through the first opening and the second opening to form a first trench within the dielectric layer and through the first hard mask layer;
- forming a silicon-containing material layer directly on the first patterned material layer, the second patterned material layer and within the first trench along sidewalls of the dielectric layer;
- removing a second portion of the dielectric layer to form a second trench within the dielectric layer, wherein a portion of the silicon-containing material layer is disposed within the first trench after the removing of the second portion of the dielectric layer;
- and
- after the removing of the second portion of the dielectric layer to form the second trench, extending the first trench to expose a portion of the substrate within the first trench.
5 more elements
A method comprising:
- forming a first material layer over a substrate;
- forming a second material layer over the first material layer;
- removing a first portion of the second material layer to form a first trench in the second material layer, the first trench having a first width and exposing a portion of the first material layer;
- forming a capping layer on a sidewall of the first material layer within the first trench and on the portion of the first material layer;
- removing a second portion of the second material layer to form a second trench in the second material layer, the second trench having a second width that is different than the first width and the second trench in communication with the first trench, wherein the capping layer remains disposed on the sidewall of the second material layer after the removing of the second portion of the second material layer to form the second trench, wherein the removing of the second portion of the second material layer to form the second trench includes removing a portion of the capping layer to expose the portion of the first material layer;
- after the removing of the second portion of the second material layer to form the second trench in the second material layer, extending the first trench by removing the exposed portion of the first material layer to thereby expose a portion of the substrate within the first trench;
- and
- after extending the first trench, forming a conductive feature within the first and second trenches such that the conductive feature covers the capping layer disposed on the sidewall of the second material layer.
5 more elements
Dependencies are inferred from the claim text.