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US 10,854,502 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Ssu-I Fu, Chun-Ya Chiu, Chi-Ting Wu, Chin-Hung Chen, Yu-Hsiang Lin
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Abstract
A semiconductor device includes a gate structure on a fin-shaped structure, a single diffusion break (SDB) structure adjacent to the gate structure, a shallow trench isolation (STI) around the fin-shaped structure, and an isolation structure on the STI. Preferably, a top surface of the SDB structure is even with a top surface of the isolation structure, and the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion.
Claims15
A semiconductor device, comprising:
- a gate structure on a fin-shaped structure;
- a single diffusion break (SDB) structure adjacent to the gate structure;
- a shallow trench isolation (STI) around the fin-shaped structure;
- an isolation structure on the STI;
- and
- a third spacer around the isolation structure on the STI, wherein a bottom surface of the isolation structure is lower than a bottom surface of the third spacer.
3 more elements
Dependencies are inferred from the claim text.