Structure and method for enhancing robustness of ESD device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Jen-Chou Tseng, Chia-Wei Hsu, Ming-Fu Tsai
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Abstract
Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.
Claims20
A method of enhancing robustness of a bipolar electrostatic discharge (ESD) device, comprising:
- providing a bipolar junction transistor comprising:
- an emitter region, the emitter region being connected to a power supply node;
- a base region, the base region being connected to the power supply node;
- and
- a collector region between the base region and the emitter region, the collector region being connected to a ground node;
- providing an isolation structure between the emitter region and the collector region;
- and
- modifying a ballasting characteristic at the isolation structure by inserting a plurality of partition structures therein, each partition structure extends substantially abreast at least one of the emitter region and the collector region.
A method comprising:
- forming a barrier layer in a substrate;
- forming an emitter region of a first dopant type in the substrate, the emitter region being over the barrier layer;
- forming a collector region of a second dopant type in the substrate, the collector region being over the barrier layer, the second dopant type being different from the first dopant type;
- and
- forming a first isolation structure comprising:
- a first portion proximate the emitter region;
- a second portion proximate the collector region;
- and
- a third portion disposed between the first portion and the second portion, each of the first portion, the second portion, and the third portion having parallel longitudinal axes, each of the first portion, the second portion, and the third portion disposed between the emitter region and the collector region, the third portion and the first portion separated by a first partition structure, the third portion and the second portion separated by a second partition structure.
A method comprising:
- forming a first deep well of a first dopant type in a substrate;
- forming a first shallow well of the first dopant type in the first deep well;
- forming a second deep well of a second dopant type in the substrate, the second deep well adjoining the first deep well, the second dopant type being different from the first dopant type;
- forming a second shallow well of the second dopant type in the second deep well;
- forming a first dielectric structure in the first shallow well;
- forming a second dielectric structure in the second shallow well;
- forming a third dielectric structure in the first deep well and the second deep well, the third dielectric structure being disposed between the first dielectric structure and the second dielectric structure;
- forming a third deep well of the first dopant type in the substrate, the third deep well adjoining the second deep well;
- forming a third shallow well of the first dopant type in the third deep well;
- and
- forming a fourth dielectric structure in the third shallow well, the third deep well, the second shallow well, and the second deep well,
- wherein the first dielectric structure, the second dielectric structure, and the third dielectric structure each extending lengthwise in a same first direction along a major surface of the substrate, and
- wherein the fourth dielectric structure extends lengthwise in the first direction along the major surface of the substrate.
Dependencies are inferred from the claim text.