Semiconductor vertical wire bonding structure and method

Abstract

The present disclosure provides a semiconductor IC structure having vertical wire bonding and method of making it. The method includes two steps. First step: providing a semiconductor chip, disposing a first solder joint and a second solder joint separately on its surface, disposing a wire bonding pad at the first solder joint, to connect to an internal functioning device of the semiconductor chip, and disposing a dummy pad at the second solder joint. Second step: bonding a metal wire on the wire bonding pad, cutting the metal wire on the dummy pad, and breaking the metal wire by pulling above the wire bonding pad, to obtain a vertical conductive column connected to the wire bonding pad.

Dependencies are inferred from the claim text.