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US 10,854,472 B2Granted
Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agent
AssigneeGlobalfoundries Inc.
InventorsHuang Liu, Wen-Pin Peng, Jean-Baptiste Laloe
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Abstract
Aspects of the present invention relate to approaches for forming a semiconductor device such as a field-effect-transistor (FET) having a metal gate with improved performance. A metal gate is formed on a substrate in the semiconductor device. Further processing can result in unwanted oxidation in the metal that forms the metal gate. A reducing agent can be used to de-oxidize the metal that forms the metal gate, leaving a substantially non-oxidized surface.
Claims7
A method for forming a metal gate in a semiconductor device, comprising:
- forming the metal gate on a substrate in the semiconductor device;
- de-oxidizing, using a reducing agent, an oxidation layer formed on the metal gate;
- and
- forming raised source-drains in proximity to the metal gate.
1 more element
Dependencies are inferred from the claim text.