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US 10,854,470 B2Granted
Plasma etching method
AssigneeTokyo Electron Limited
InventorTakayuki Katsunuma
Life of this patent
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Abstract
Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.
Claims17
A plasma etching method, comprising:
- forming a fluoro-carbon protective film on a metal-containing mask with a preset opening pattern on an etching target film including SiO2, by a first processing gas including fluoro-carbon gas and oxygen containing gas;
- and
- etching the etching target film by plasma generated from a second processing gas through the metal-containing mask on which the fluoro-carbon protective film is formed.
A plasma etching method, comprising:
- etching an etching target film including SiO2 by plasma generated from a processing gas including fluoro-carbon gas and oxygen containing gas through a metal-containing mask with a preset opening pattern on the etching target film;
- and
- intermittently applying a radio frequency power for attraction of ions in the plasma for a period during which the plasma is being generated from the processing gas,
- wherein a fluoro-carbon containing protective film is formed on the metal-containing mask when the radio frequency power is not applied, and
- wherein the etching of the etching target film through the metal-containing mask on which the protective film is formed progresses when the radio frequency power is applied.
2 more elements
Dependencies are inferred from the claim text.