Back to results
US 10,854,466 B2Granted
Etching method, method of manufacturing semiconductor chip, and method of manufacturing article
AssigneeKabushiki Kaisha Toshiba
InventorsKeiichiro Matsuo, Susumu Obata, Mitsuo Sano, Kazuhito Higuchi, Kazuo Shimokawa
Life of this patent
Estimating the term…
Abstract
An etching method according to an embodiment includes forming an uneven structure including a projection on a surface of a semiconductor substrate; forming a catalyst layer including a noble metal on the surface selectively at a top surface of the projection; and supplying an etchant to the catalyst layer to cause an etching of the semiconductor substrate with an assist from the noble metal as a catalyst.
Claims15
An etching method comprising:
- forming an uneven structure including a projection on a surface of a semiconductor substrate;
- forming a catalyst layer including a noble metal on the surface selectively at a top surface of the projection;
- and
- supplying an etchant to the catalyst layer to cause an etching of the semiconductor substrate with an assist from the noble metal as a catalyst,
- wherein the forming of the uneven structure includes:
- forming a first mask layer having an opening on the surface;
- etching the surface using the first mask layer as an etching mask;
- and
- removing the first mask layer.
6 more elements
An etching method comprising:
- forming an uneven structure including a projection on a surface of a semiconductor substrate:
- forming a catalyst layer including a noble metal on the surface selectively at a top surface of the projection;
- and
- supplying an etchant to the catalyst layer to cause an etching of the semiconductor substrate with an assist from the noble metal as a catalyst,
- wherein the forming of the uneven structure includes:
- forming a second mask layer having an opening on the surface;
- and
- forming a semiconductor layer on the surface at the opening.
5 more elements
Dependencies are inferred from the claim text.