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US 10,854,465 B2Granted
Method of fabricating pattern structure
AssigneeSamsung Electronics Co., Ltd.
InventorsShigenobu Maeda, Jeong Ju Park, Eunsung Kim, Hyunwoo Kim, Shiyong Yi
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Abstract
A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.
Claims20
A method comprising:
- forming a mask layer on an etch target layer;
- forming a sacrificial pattern on the mask layer extending in a first direction, the sacrificial pattern having a linear structure of a first width;
- forming spacers on sidewalls of the sacrificial pattern to define a first opening exposing a top surface of the mask layer, the first opening having a second width different from the first width;
- removing the sacrificial pattern to form a second opening having the first width;
- etching the mask layer using the spacers as etch masks to form mask patterns, the mask patterns defining a third opening having the first width and a fourth opening having the second width;
- filling each of the third and fourth openings with a block copolymer material including first and second polymer blocks of different properties;
- and
- annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns, the first patterns including the first polymer blocks and the second patterns including the second polymer blocks,
- wherein an upper surface of at least one of the first and second patterns is flush with an upper surface of at least one of the mask patterns;
- and
- wherein the etching the mask layer results in surface of the mask patterns to be hydrophilic, the hydrophilic surfaces of the mask patterns being hydrophobically modified.
8 more elements
A method comprising:
- forming a block copolymer layer between adjacent mask patterns, the block copolymer layer including first polymer blocks and second polymer blocks different from the first polymer blocks;
- forming a neutral layer on the block copolymer layer and the mask patterns before annealing;
- and
- annealing the block copolymer layer in order to form first polymer block patterns and at least one second polymer block pattern, the first polymer block patterns at respective sidewalls of the adjacent mask patterns and the at least one second polymer block pattern between the first polymer block patterns, the first polymer block patterns including the first polymer blocks and the at least one second polymer block pattern including the second polymer blocks,
- wherein an upper surface of at least one of the first and second polymer block patterns is flush with an upper surface of at least one of the mask patterns;
- and
- wherein surfaces of mask patterns are hydrophobic.
4 more elements
A method comprising:
- forming mask patterns on an etch target layer;
- forming a block copolymer layer between adjacent mask patterns, the block copolymer layer including first polymer blocks and second polymer blocks different from the first polymer blocks;
- annealing the block copolymer layer in order to form first polymer block patterns and at least one second polymer block pattern, the first polymer block patterns at respective sidewalls of the adjacent mask patterns and the at least one second polymer block pattern between the first polymer block patterns, the first polymer block patterns including the first polymer blocks and the at least one second polymer block pattern including the second polymer blocks;
- removing the first polymer block patterns and the mask patterns after the annealing;
- and
- etching the etch target layer using the at least one second polymer block pattern as an etch mask to form a pattern structure,
- wherein an upper surface of at least one of the first and second polymer block patterns is flush with an upper surface of at least one of the mask patterns;
- and
- wherein surfaces of mask patterns are hydrophobic.
6 more elements
Dependencies are inferred from the claim text.