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US 10,854,461 B2Granted
Tungsten deposition without barrier layer
AssigneeApplied Materials, Inc.
InventorsYihong Chen, Yong Wu, Chia Cheng Chin, Srinivas Gandikota, Kelvin Chan
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Abstract
Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
Claims20
A processing method comprising:
- exposing a substrate surface to a boron precursor to form an amorphous boron layer, the substrate surface being substantially free of a barrier layer;
- exposing the amorphous boron layer to a first metal precursor to convert the amorphous boron layer to a first metal layer;
- and
- forming a second metal layer on the first metal layer by exposing the first metal layer to a second metal precursor.
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A processing method comprising:
- exposing a substrate surface to a silicon precursor to form an amorphous silicon layer, the substrate surface being substantially free of a barrier layer;
- exposing the amorphous silicon layer to a first metal precursor to convert the amorphous silicon layer to a first metal layer;
- and
- forming a second metal layer on the first metal layer by exposing the first metal layer to a second metal precursor.
1 more element
Dependencies are inferred from the claim text.