Method and structure for semiconductor device having gate spacer protection layer

A device comprising:

• a gate stack disposed over a substrate, the gate stack including a gate electrode and a first dielectric layer disposed over a first portion of the gate electrode such that the first dielectric layer physically contacts a top surface of the first portion of the gate electrode, the top surface of the first portion of the gate electrode facing away from the substrate;
• a sidewall spacer disposed along a sidewall of the gate stack;
• a protection layer disposed along a first sidewall of the first dielectric layer such that the protection layer physically contacts the first sidewall of the first dielectric layer and extends over a top surface of the sidewall spacer, the top surface of the sidewall spacer facing away from the substrate;
• and
• a first contact extending through the protection layer and the first dielectric layer to a second portion of the gate electrode such that the first contact physically contacts the protection layer and a second sidewall of the first dielectric layer, the second sidewall of the first dielectric layer opposing the first sidewall of the first dielectric layer.

A device comprising:

• a gate stack disposed over a substrate, the gate stack including a gate electrode and a first dielectric layer disposed over a first portion of the gate electrode such that the first dielectric layer physically contacts a top surface of the first portion of the gate electrode;
• a sidewall spacer disposed along and physically contacting a sidewall of the gate stack;
• a protection layer disposed along a first sidewall of the first dielectric layer such that the protection layer physically contacts the first sidewall of the first dielectric layer;
• and
• a first contact extending through the protection layer and the first dielectric layer to a second portion of the gate electrode such that the first contact physically contacts the protection layer and a second sidewall of the first dielectric layer, the second sidewall of the first dielectric layer opposing the first sidewall of the first dielectric layer.