Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a stacked body including a first n-type semiconductor layer and a p-type semiconductor layer stacked on the first n-type semiconductor layer;
• a groove that penetrates the p-type semiconductor layer and has a bottom portion located in the first n-type semiconductor layer;
• an impurity implanted region formed from a surface of the p-type semiconductor layer to inside of the p-type semiconductor layer, the impurity implanted region being at a position away from a position where the groove is to be formed, the impurity implanted region having an impurity concentration different from an impurity concentration of the p-type semiconductor layer;
• a p-type semiconductor region formed in the first n-type semiconductor layer located below the impurity implanted region;
• and
• a first electrode formed on an insulation film on a surface of the groove,
• wherein there is no impurity implanted region existing beneath the groove and contacting the groove,
• wherein the impurity implanted region is a region into which an n-type impurity is implanted,
• the semiconductor device further comprising a second electrode to be conductive to the impurity implanted region,
• wherein the first electrode is formed on the insulation film in a range from the surface of the groove at least to a position on the surface of the p-type semiconductor layer at which the impurity implanted region is formed.