Loading patent…
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsXiao Jun Wang, Wei Zhou, Lin Kang Xu, Guan Nan Li
Estimating the term…
The present disclosure describes patterned devices and methods for repairing substrate lattice damage in a patterned device. The patterned device includes a substrate, an alternating conductor and dielectric stack atop the substrate, a channel hole extending through the alternating conductor and dielectric stack to the substrate, and an epitaxial grown layer at a bottom of the channel hole and a top surface of the substrate. A part of the substrate in contact with the epitaxial grown layer has a dopant or doping concentration different from an adjacent part of the substrate. The method includes forming a channel hole in an insulating layer atop a substrate, forming an amorphous layer in a top side of the substrate below the channel hole, heating to crystallize the amorphous layer, and growing an epitaxial layer on the crystallized layer in the channel hole.
A patterned device comprising:
A patterned device comprising:
A patterned device comprising:
Dependencies are inferred from the claim text.