Method and apparatus for forming silicon film
AssigneeTokyo Electron Limited
InventorsSatoshi Takagi, Hiroyuki Hayashi, Hsiulin Tsai
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Abstract
A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.
Claims16
A method of forming a silicon film in a recess formed in a target substrate, comprising:
- preparing a target substrate having a recess in which a plurality of different bases is exposed;
- forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature;
- and
- forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature,
- wherein the raw material gas is selected depending on material properties of the bases, and
- wherein the atomic layer seed is formed by using one of a chlorine-containing Si compound gas, a chlorine-containing Ti compound gas, and a compound containing metal of a high-k film as the raw material gas and using one of an oxidant and a nitridant as the reaction gas.
A method of forming a silicon film in a recess formed in a target substrate, comprising:
- preparing a target substrate including a laminated film formed by alternately laminating a SiO2 film and a SiN film on a base, and a recess formed in a laminating direction of the SiO2 film and the SiN film, wherein the SiO2 film and the SiN film are exposed in a lateral surface of the recess;
- forming an atomic layer seed composed of a SiO2 film on at least an inner surface of the recess by sequentially supplying a chlorine-containing Si compound gas and an oxidant to the target substrate one or more times while heating the target substrate to a first temperature;
- and
- forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a silicon raw material gas including a monosilane gas to the target substrate while heating the target substrate to a second temperature.
Dependencies are inferred from the claim text.