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US 10,854,447 B2Granted
Film forming method, method of manufacturing semiconductor device, and film forming device
AssigneeDenso Corporation
InventorTatsuji Nagaoka
Life of this patent
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Abstract
A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.
Claims1
A film forming device that forms a film on a substrate, the film forming device comprising:
- a furnace in which the substrate is disposed;
- a heater configured to heat the substrate in the furnace;
- a first mist supply device configured to supply mist of a raw material solution of the film into the furnace;
- a second mist supply device configured to supply a water mist into the furnace;
- and
- a control device configured to control the heater, the first mist supply device, and the second mist supply device,
- wherein the control device is configured to
- cause the heater to anneal the substrate,
- cause the second mist supply device to supply the water mist to a surface of the substrate during the annealing, and
- cause the first mist supply device to supply the mist to the surface of the substrate after the annealing while causing the heater to heat the substrate at a temperature lower than a temperature of the substrate during the annealing.
7 more elements
Dependencies are inferred from the claim text.