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US 10,854,446 B2Granted
Epitaxies of a chemical compound semiconductor
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
InventorsHung-Wei Yu, Yi Chang, Tsun-Ming Wang
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Abstract
Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.
Claims20
A method comprising:
- providing a substrate;
- forming a prelayer over a substrate;
- forming over the prelayer a barrier layer that includes an InxGa1−xAs epitaxy with one or more GaAs-based layers;
- and
- forming a channel layer over the barrier layer;
- wherein a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
3 more elements
A method comprising:
- providing a substrate;
- forming over the substrate a prelayer at a graded temperature;
- forming a barrier layer over the prelayer;
- and
- forming a channel layer over the barrier layer;
- wherein the barrier layer includes an InxGa1−xAs epitaxy with one or more GaAs-based layers;
- wherein a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
4 more elements
A method comprising:
- providing a substrate;
- growing an As prelayer over the substrate at a graded temperature;
- forming over the prelayer a barrier layer that includes an InxGa1−xAs epitaxy with one or more GaAs-based layers;
- forming a channel layer over the barrier layer;
- and
- generating 90° misfit dislocations between the barrier and the channel layer to relax strain;
- wherein a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
4 more elements
Dependencies are inferred from the claim text.