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US 10,854,445 B2Granted
Infrared optical sensor and manufacturing method thereof
AssigneeElectronics and Telecommunications Research Institute
InventorsBok Ki Min, Choon Gi Choi
Life of this patent
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Abstract
Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.
Claims13
An infrared optical sensor comprising:
- a substrate;
- a channel layer on the substrate;
- optical absorption structures dispersed and disposed on the channel layer;
- and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures comprise transition metal dichalcogenides;
- and further comprising:
- wavelength adjustment elements chemically bonded to surfaces of the optical absorption structures.
3 more elements
A manufacturing method of an infrared optical sensor comprising:
- forming a channel layer on a substrate;
- growing optical absorption structures on a top surface of the channel layer;
- and forming electrodes on both sides of the channel layer on the substrate, wherein the forming of the channel layer and the growing of the optical absorption structures comprise:
- providing a transition metal element source and a chalcogenide element source in one side of the substrate;
- providing vapor of the transition metal element source and vapor of the chalcogenide element source on the substrate;
- and applying heat onto the substrate;
- and further comprising:
- after forming of the optical absorption structures, bonding wavelength adjustment elements to surfaces of the optical absorption structures.
5 more elements
Dependencies are inferred from the claim text.